Investigation of Material and Geometric Effects on the Performance of Gate All Around Nanowire TFET and FET Devices

Authors

  • Lim Zu Ying Department of Electrical Engineering, Faculty of Engineering, Universiti Malaya
  • Sharifah Fatmadiana Wan Muhamad Hatta Department of Electrical Engineering, Faculty of Engineering, Universiti Malaya
  • Hanim Hussin School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA

Keywords:

Gate-All-Around (GAA); Tunnel Field-Effect Transistor (TFET); Field-Effect Transistor (FET); Silicon Nanowire (Si-NW).

Abstract

Advancements in nanoscale technology have enabled lower operating voltages and reduced power consumption, but also increased leakage currents. This study explores the performance of Tunnel Field-Effect Transistors (TFETs) and Field-Effect Transistors (FETs) using gate-all-around (GAA) silicon nanowires (Si-NW), which offer improvements over traditional MOSFETs by reducing short channel effects. The optimized GAA NWTFETs achieved a significant reduction in threshold voltage (69.5%) and leakage current (6.39%), while enhancing ON current, subthreshold swing, and ON/OFF current ratio. Similarly, the optimized GAA NWFETs demonstrated a substantial reduction in leakage current (97.59%) and a dramatic improvement in the ON/OFF current ratio by 4611.97%. These results highlight the potential of GAA nanowire TFETs and FETs in advancing semiconductor technologies with improved performance and energy efficiency.

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Published

2025-03-13

How to Cite

Ying, L. Z. ., Hatta, S. F. W. M. ., & Hussin, H. . (2025). Investigation of Material and Geometric Effects on the Performance of Gate All Around Nanowire TFET and FET Devices. New Explorations in Electrical Engineering, 1(1), 39–47. Retrieved from https://vmis.um.edu.my/index.php/NECE/article/view/59686